Senior Research Engineer (SiC Power Device Integration), (SiC), IME
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A*Star-IME is currently working on establishing a hybrid fabrication platform for 150mm and 200mm Silicon Carbide (SiC) power MOSFETs as a new pillar on Singapore"s Future of Microlectronics in wide-bandgap. The main objective of this SiC RnD program is to advance 200mm SiC technologies in various areas, such as epitaxy, device design, process integration & fabrication, and power module packaging. The ultimate aim is to drive disruptive innovations in power device research, specifically focusing on >1.7KV power MOSFETs. These innovations will have significant applications in enhancing automotive technologies, vehicle electrification, safety measures, sustainable energy grids, data centers, and industrial & aerospace automation. Key aspects for this role to be successful include the development and integration of several process modules, such as gate oxidation, implantation, implant activation, layout design verification, lithography, and ohmic contact formation. We are actively looking for individuals with extensive industry experience in device physics and process integration to join our team. The candidate will contribute to process integration, E-test and module process related data analysis, yield enhancement, and device physics.
RESPONSIBILITIES:
• Lead develop process technology for SiC power MOSFETs and ensure it meets the requirements for prototyping manufacturing
• Collaborate with advanced process module development team to establish a process flow for fabricating specific MOS devices
• Responsible to develop and improve test structures that enable fast and rigorous characterization of process
• Accountable to improve device performance and yield through the design, execution, and analysis of experiments for each specific device and product
• Work with cross-functional teams to minimize defects and address technical and yield concerns
• Drive CIP (Continuous improvement plans) to deliver integrated process modules and specific device per project goals
• Make decisions regarding the delivery of process, active and passive devices to multiple customers
REQUIREMENTS:
• MS/PhD Degree in Electrical Engineering or related field
• >3 years industrial experience for MOSFET process integration and device physics
• Proactive, self-motivated, and results-oriented professional with the ability to make efficient contributions to and lead technical discussions
• Extensive expertise in material and process integration
• Comprehensive understanding of semiconductor materials and the physics of MOSFET devices
• Strong communication skills to effectively communicate information about module integration for device fabrication and with customers
• Excellent analytical skills for interpreting process and device data, coupled with strong presentation abilities
A*Star-IME is currently working on establishing a hybrid fabrication platform for 150mm and 200mm Silicon Carbide (SiC) power MOSFETs as a new pillar on Singapore"s Future of Microlectronics in wide-bandgap. The main objective of this SiC RnD program is to advance 200mm SiC technologies in various areas, such as epitaxy, device design, process integration & fabrication, and power module packaging. The ultimate aim is to drive disruptive innovations in power device research, specifically focusing on >1.7KV power MOSFETs. These innovations will have significant applications in enhancing automotive technologies, vehicle electrification, safety measures, sustainable energy grids, data centers, and industrial & aerospace automation. Key aspects for this role to be successful include the development and integration of several process modules, such as gate oxidation, implantation, implant activation, layout design verification, lithography, and ohmic contact formation. We are actively looking for individuals with extensive industry experience in device physics and process integration to join our team. The candidate will contribute to process integration, E-test and module process related data analysis, yield enhancement, and device physics.
RESPONSIBILITIES:
• Lead develop process technology for SiC power MOSFETs and ensure it meets the requirements for prototyping manufacturing
• Collaborate with advanced process module development team to establish a process flow for fabricating specific MOS devices
• Responsible to develop and improve test structures that enable fast and rigorous characterization of process
• Accountable to improve device performance and yield through the design, execution, and analysis of experiments for each specific device and product
• Work with cross-functional teams to minimize defects and address technical and yield concerns
• Drive CIP (Continuous improvement plans) to deliver integrated process modules and specific device per project goals
• Make decisions regarding the delivery of process, active and passive devices to multiple customers
REQUIREMENTS:
• MS/PhD Degree in Electrical Engineering or related field
• >3 years industrial experience for MOSFET process integration and device physics
• Proactive, self-motivated, and results-oriented professional with the ability to make efficient contributions to and lead technical discussions
• Extensive expertise in material and process integration
• Comprehensive understanding of semiconductor materials and the physics of MOSFET devices
• Strong communication skills to effectively communicate information about module integration for device fabrication and with customers
• Excellent analytical skills for interpreting process and device data, coupled with strong presentation abilities
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